| PART |
Description |
Maker |
| IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
| IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| APT20M38SVR APT20M38SVRG |
200V 67A 0.038W
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| IRFP260 IRFP260N IRFP260NPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）\u003d 0.04ohm，身份证\u003d 50A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF630N IRF630NL IRF630NS |
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.30ohm，身份证\u003d 9.3A
Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)
Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| U20C20 U20C05 U20C10 U20C15 |
POWER RECTIFIERS(20A,50-200V)
POWER RECTIFIERS(20A50-200V)
POWER RECTIFIERS(20A/50-200V)
|
MOSPEC[Mospec Semiconductor]
|
| IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V，P通道表面安装抗辐射功率MOSFET00V的电压，P沟道表贴型抗辐射功率马鞍山场效应管）
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
|
| FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STY100NS20FD 7739 |
N-CHANNEL Power MOSFET
N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET
From old datasheet system
N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY⑩ Power MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
